Resistive switching behavior in Pt/YSZ/Nb:SrTiO3 heterostructure for nonvolatile multilevel memories-Reference-Cited by-同舟云学术

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Resistive switching behavior in Pt/YSZ/Nb:SrTiO3 heterostructure for nonvolatile multilevel memories

Published:2014-11 Issue: Volume:612 Page:30-33
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Zhu Yongdan,Li Meiya,Liu Jun,Hu Zhongqiang,Wang Qiangwen,Zhang Yuan,Wei Maocai,Hu Cheng

Funder

National Natural Science Foundation of China

Hubei Minzu University

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference25 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Who Wins the Nonvolatile Memory Race?

3. Resistive switching characteristics and mechanisms of Pt-embedded SrZrO3 memory devices

4. Role of oxygen vacancies in the resistive switching of SrZrO3 for resistance random access memory

5. Rectifying behavior and transport mechanisms of currents in Pt/BaTiO3/Nb:SrTiO3 structure

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1. Exploring the Bifunctionality of YSZ Thin Films in MOS Structures: Bridging the Gap between RRAM and Super-Pseudocapacitor Technologies;ACS Applied Electronic Materials;2024-01-03

2. Biomaterial-based nonvolatile photonic memory;Carbon;2023-01

3. Silver-Doped Citrus Pectin Resistive Random Access Memory with Multilevel Characteristics;ECS Journal of Solid State Science and Technology;2022-05-01

4. Impact of Top Electrodes on the Nonvolatile Resistive Switching Properties of Citrus Thin Films;Polymers;2021-02-26

5. Superposition of interface and volume type resistive switching in perovskite nanoionic devices;Journal of Materials Chemistry C;2019

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