Light-induced double enhancement of resistive switching and control of ferromagnetism in ZnO film-Reference-Cited by-同舟云学术

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Light-induced double enhancement of resistive switching and control of ferromagnetism in ZnO film

Published:2019-07-17 Issue:9 Volume:6 Page:096428
ISSN:2053-1591
Container-title:Materials Research Express
language:
Short-container-title:Mater. Res. Express

Author:

Xie Jihao^ORCID,Cheng Bin,Liu Liang,Ren Shaoqing,Liu Weikang,Zhou Guangjun,Qin Hongwei,Hu Jifan

Funder

The Fundamental Research Funds of Shandong University

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Publisher

IOP Publishing

Subject

Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/2053-1591/ab308f/pdf

Reference50 articles.

1. Low‐Frequency Negative Resistance in Thin Anodic Oxide Films

2. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

3. Resistive switching in transition metal oxides

4. A Light-Controlled Resistive Switching Memory

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1. Recent progress in optoelectronic memristors for neuromorphic and in-memory computation;Neuromorphic Computing and Engineering;2023-05-25

2. Binary metal oxide-based resistive switching memory devices: A status review;Materials Today Communications;2023-03

3. Light‐Enhanced Negative Differential Resistance and Multi‐Level Resistive Switching in Glutamine‐Functionalized MoS ₂ Quantum Dots for Resistive Random‐Access Memory Devices;Advanced Materials Interfaces;2022-11-27

4. Laser modification of Au–CuO–Au structures for improved electrical and electro-optical properties;Nanotechnology;2022-03-25

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