Large magnetization modulation in ZnO-based memory devices with embedded graphene quantum dots-Reference-Cited by-同舟云学术

Large magnetization modulation in ZnO-based memory devices with embedded graphene quantum dots

Published:2019 Issue:29 Volume:21 Page:16047-16054
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Chen Tong¹²³⁴⁵^ORCID,Chen Wei¹²³⁴⁵^ORCID,Liu Lifu¹²³⁴⁵,Wang Yuan¹²³⁴⁵,Zhao Xu¹²³⁴⁵

Affiliation:

1. Key Laboratory of Advanced Films of Hebei Province

2. College of Physics

3. Hebei Normal University

4. Shijiazhuang 050024

5. China

Abstract

Large magnetization modulation up to 500% is achieved in ZnO-based memory device under applied biases of only 0.23/−0.20 V through embedding graphene quantum dots.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CP/C9CP03056E

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