Large magnetoresistance and spin-polarized photocurrent in La2/3Sr1/3MnO3(Co)/quaterthiophene/La2/3Sr1/3MnO3 organic magnetic tunnel junctions-Reference-Cited by-同舟云学术

Large magnetoresistance and spin-polarized photocurrent in La2/3Sr1/3MnO3(Co)/quaterthiophene/La2/3Sr1/3MnO3 organic magnetic tunnel junctions

Published:2019 Issue:14 Volume:7 Page:4079-4088
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Han Xuefei¹²³⁴⁵,Mi Wenbo¹²³⁴⁵^ORCID,Wang Xiaocha⁶⁷⁸⁵^ORCID

Affiliation:

1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology

2. School of Science

3. Tianjin University

4. Tianjin 300354

5. China

6. School of Electrical and Electronic Engineering

7. Tianjin University of Technology

8. Tianjin 300384

Abstract

Large tunneling magnetoresistance, perfect spin injection and fully spin-polarized photocurrent are realized in a LSMO/T₄/LSMO organic magnetic tunnel junction.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Tianjin City

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC06547K

Reference64 articles.

1. Magnetic Tunnel Junctions for Spintronic Memories and Beyond

2. Room temperature spin polarized injection in organic semiconductor

3. Observation of a large spin-dependent transport length in organic spin valves at room temperature

4. Inverse spin Hall effect from pulsed spin current in organic semiconductors with tunable spin–orbit coupling

5. Spin routes in organic semiconductors

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