Large magnetoresistance and spin-polarized photocurrent in Mn2.25Co0.75Ga0.5Sn0.5/MgO/Mn2.25Co0.75Ga0.5Sn0.5 magnetic tunnel junctions-Reference-Cited by-同舟云学术

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Large magnetoresistance and spin-polarized photocurrent in Mn2.25Co0.75Ga0.5Sn0.5/MgO/Mn2.25Co0.75Ga0.5Sn0.5 magnetic tunnel junctions

Published:2023-03 Issue: Volume:221 Page:112086
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Liu Yuan,Huang Li,Wang Liying

Funder

National Natural Science Foundation of China

Natural Science Foundation of Tianjin City

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference46 articles.

1. Electric field manipulation of magnetization rotation and tunneling magnetoresistance of magnetic tunnel junctions at room temperature;Li;Adv. Mater.,2014

2. Room temperature spin valve effect in the NiFe/Gr–hBN/Co magnetic tunnel junction;Iqbal;J. Mater. Chem. C,2016

3. Magnetic Tunnel Junctions for Spintronic Memories and Beyond;Ikeda;IEEE T. Electron Dev.,2007

4. Tunneling between ferromagnetic films;Julliere;Phys. Lett.,1975

5. Spin transport properties based on spin gapless semiconductor CoFeMnSi;Han;Appl. Phys. Lett.,2017

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