Negative photoconductivity of two‐dimensional holes in GaAs/AlGaAs heterojunctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96088
Reference10 articles.
1. Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration
2. Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration
3. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
4. Persistent photoconductivity and the quantized Hall effect in In0.53Ga0.47As/InP heterostructures
5. Temperature dependence of the mobility of two‐dimensional hole systems in modulation‐doped GaAs‐(AlGa)As
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