Temperature dependence of the mobility of two‐dimensional hole systems in modulation‐doped GaAs‐(AlGa)As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94580
Reference15 articles.
1. Electron mobilities in modulation-doped GaAs-(AlGa)As heterostructures
2. Electron mobility in single and multiple period modulation‐doped (Al,Ga)As/GaAs heterostructures
3. Two-dimensional electron gas at a semiconductor-semiconductor interface
4. Two‐dimensional electron gas in a In0.53Ga0.47As‐InP heterojunction grown by metalorganic chemical vapor deposition
5. Two‐dimensional electron gas at a molecular beam epitaxial‐grown, selectively doped, In0.53Ga0.47As‐In0.48Al0.52As interface
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