Metalorganic vapor phase epitaxial growth for buried heterostructure GaAlAs lasers with semi‐insulating blocking layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98317
Reference10 articles.
1. GaAs–Ga1−xAlxAs buried‐heterostructure injection lasers
2. Ultra-low threshold, graded-index waveguide, separate confinement, CW buried-heterostructure lasers
3. Low threshold and low dispersion MOCVD/LPE buried-heterostructure GaAs/GaAlAs lasers
4. GaAs‐AlxGa1−xAs buried‐heterostructure lasers grown by molecular beam epitaxy with Al0.65Ga0.35As (Ge‐doped) liquid phase epitaxy overgrown layer for current injection confinement
5. GaAlAs buried-heterostructure lasers grown by a two-step MOCVD process
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1. Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications;Journal of Applied Physics;1999-05
2. High performance strained InGaAs/AlGaAs buried‐heterostructure quantum‐well lasers fabricated byin situetching and regrowth;Applied Physics Letters;1993-04-12
3. Patterned substrate epitaxy surface shapes;Journal of Crystal Growth;1991-01
4. InGaAs-GaAs-AlGaAs strained-layer quantum well lasers by metal-organic chemical vapour deposition;Semiconductor Science and Technology;1990-06-01
5. Ion implantation for isolation of III-V semiconductors;Materials Science Reports;1990-01
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