High performance strained InGaAs/AlGaAs buried‐heterostructure quantum‐well lasers fabricated byin situetching and regrowth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109559
Reference8 articles.
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4. Metalorganic vapor phase epitaxial growth for buried heterostructure GaAlAs lasers with semi‐insulating blocking layers
5. InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition
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1. Tunable laser diode sources for 830-nm and 980-nm wavelength range;SPIE Proceedings;2000-02-23
2. High-performance 980-nm emission wavelength InGaAs/AlGaAs/GaAs laser diodes;SPIE Proceedings;2000-02-23
3. Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits;IEEE Journal of Selected Topics in Quantum Electronics;1997-06
4. Effects of lateral modes on the static and dynamic behaviour of buried heterostructure DFB lasers;IEE Proceedings - Optoelectronics;1995-04-01
5. Exploration of entire range of III–V semiconductors and their device applications;Materials Science and Technology;1995-01
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