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Ion implantation for isolation of III-V semiconductors

Published:1990-01 Issue:6 Volume:4 Page:313-363
ISSN:0920-2307
Container-title:Materials Science Reports
language:en
Short-container-title:Materials Science Reports

Author:

Pearton S.J.

Publisher

Elsevier BV

Subject

General Engineering

Reference186 articles.

1. Gallium Arsenide;Morgan,1985

2. Mechanisms of amorphization and recrystallization in ion implanted III–V compound semiconductors

3. Ion Implantation in GaAs

4. Ion implantation in III–V compounds

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