Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing
Author:
Tillement Jules123ORCID, Cervera Cyril2, Baylet Jacques2, Jany Christophe2, Nardelli François2, Di Rito Thomas2, Georges Sylvain1, Mugny Gabriel1, Saxod Olivier2, Gravrand Olivier2, Baron Thierry3ORCID, Roy François1ORCID, Boeuf Frédéric1ORCID
Affiliation:
1. STMicroelectronics, 850 Rue Jean Monnet, 38054 Crolles, France 2. Univ. Grenoble Alpes, CEA, Leti, F38000 Grenoble, France 3. CNRS LTM, 38054 Grenoble, France
Abstract
This paper presents the complete design, fabrication, and characterization of a shallow-mesa photodiode for short-wave infra-red (SWIR) sensing. We characterized and demonstrated photodiodes collecting 1.55 μm photons with a pixel pitch as small as 3 μm. For a 5 μm pixel pitch photodiode, we measured the external quantum efficiency reaching as high as 54%. With substrate removal and an ideal anti-reflective coating, we estimated the internal quantum efficiency as achieving 77% at 1.55 μm. The best measured dark current density reached 5 nA/cm2 at −0.1 V and at 23 °C. The main contributors responsible for this dark current were investigated through the study of its evolution with temperature. We also highlight the importance of passivation with a perimetric contribution analysis and the correlation between MIS capacitance characterization and dark current performance.
Funder
French Public Authorities
Subject
Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry
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