Raman scattering from Ge nanostructures grown on Si substrates: Power and limitations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372279
Reference24 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Lithographic positioning of self-assembled Ge islands on Si(001)
3. Instability of two-dimensional layers in the Stranski-Krastanov growth mode of Ge on Si(111)
4. Alignment of Ge three-dimensional islands on faceted Si(001) surfaces
5. Visible photoluminescence of Ge microcrystals embedded in SiO2glassy matrices
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