Instability of two-dimensional layers in the Stranski-Krastanov growth mode of Ge on Si(111)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.15647/fulltext
Reference27 articles.
1. Heteroepitaxial growth of Ge films on the Si(100)‐2×1 surface
2. Thin epitaxial Ge−Si(111) films: Study and control of morphology
3. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
4. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
5. Strained-layer growth and islanding of germanium on Si(111)-(7 × 7) studied with STM
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1. Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures;Applied Surface Science;2019-01
2. Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures;Materials Science in Semiconductor Processing;2018-08
3. Stranski–Krastanov growth of (Si)Ge/Si(001): transmission electron microscopy compared with segregation theory;Materials Science and Technology;2018-04-02
4. Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures;Advances in Semiconductor Nanostructures;2017
5. Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky–Krastanov Growth Mechanism;Advances in Semiconductor Nanostructures;2017
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