Strained-layer growth and islanding of germanium on Si(111)-(7 × 7) studied with STM
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference24 articles.
1. Islanding and Surface Diffusion in Semiconductor Heteroepitaxy: Ge on Si
2. A simplified scanning tunneling microscope for surface science studies
3. The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)
4. Surface Reconstruction and the Nucleation of Palladium Silicide on Si(111)
5. Initial Stage of Ag Condensation on Si(111)7×7
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