In situ observation of surface processes in InAs/GaAs(001) heteroepitaxy: The role of As on the growth mode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1342216
Reference21 articles.
1. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
2. Critical layer thickness for self-assembled InAs islands on GaAs
3. Coarsening of Self-Assembled Ge Quantum Dots on Si(001)
4. Shape transition of InAs quantum dots by growth at high temperature
5. Size and shape effects of quantum dots on two-electron spectra
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