Shape transition of InAs quantum dots by growth at high temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123506
Reference14 articles.
1. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
3. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
4. Temperature dependent lasing characteristics of multi-stacked quantum dot lasers
5. Controlling polarization of quantum-dot surface-emitting lasers by using structurally anisotropic self-assembled quantum dots
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