Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4816088
Reference24 articles.
1. Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
3. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
4. Red light emission by photoluminescence and electroluminescence from Eu-doped GaN
5. Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection
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