Demonstration of GaN:Eu/GaN nanowire light emitting diodes grown by selective-area organometallic vapor phase epitaxy

Abstract

Abstract We report on the demonstration of GaN:Eu/GaN nanowire (NW) LEDs grown by organometallic vapor phase epitaxy (OMVPE). The GaN:Eu/GaN NW LED structures with a large aspect ratio (>8) are formed by selective-area OMVPE, and have pedestals that are free from lateral overgrowth of p-GaN in order to prevent short circuiting. The structures are embedded in polydimethylsiloxane followed by a wet-etching process to expose the tips of NW LEDs for contacting. Red luminescence with a narrow linewidth originating from Eu3+ ions is observed at room temperature under current injection in the GaN:Eu/GaN NW LEDs.