Valence band offset of MgO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2975168
Reference20 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. Valence band offset and hole injection at the 4H-, 6H-SiC/SiO2 interfaces
3. Electronic structure and band alignment at the HfO2∕4H-SiC interface
4. Determination of MgO∕GaN heterojunction band offsets by x-ray photoelectron spectroscopy
5. MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy
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