Flow-rate modulation epitaxy of wurtzite AlBN-Reference-Cited by-同舟云学术

Flow-rate modulation epitaxy of wurtzite AlBN

Published:2006-01-23 Issue:4 Volume:88 Page:041902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Akasaka Tetsuya,Makimoto Toshiki

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2164900

Reference14 articles.

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2. 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

3. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron

4. M. Haruyama, T. Shirai, H. Kawanishi, and Y. Suematsu, in Proceedings of International Symposium on Blue Laser and Light Emitting Diodes (Chiba University, Japan, 1996), p. 106.

5. Growth of GaBN ternary solutions by organometallic vapor phase epitaxy

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