Nanoscale compositional analysis of wurtzite BAlN thin film using atom probe tomography
Author:
Affiliation:
1. Department of Materials Design and Innovation, University at Buffalo-SUNY, Buffalo, New York 14260, USA
2. King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955, Saudi Arabia
Funder
Competitive Research Grants
GCC Research Council
King Abdullah University of Science and Technology
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0027861
Reference40 articles.
1. Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application
2. Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction
3. Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering
4. BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN/AlGaN heterostructures
5. Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures
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