Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction-Reference-Cited by-同舟云学术

Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction

Published:2017-09-18 Issue:12 Volume:111 Page:122106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sun Haiding¹,Park Young Jae²,Li Kuang-Hui¹,Torres Castanedo C. G.¹,Alowayed Abdulmohsen¹,Detchprohm Theeradetch²,Dupuis Russell D.²^ORCID,Li Xiaohang¹^ORCID

Affiliation:

1. King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955-6900, Saudi Arabia

2. Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

Funder

GCC Research Program

National Science Foundation (NSF)

Defense Advanced Research Projects Agency (DARPA)

King Abdullah University of Science and Technology (KAUST)

Georgia Research Alliance (GRA)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4999249

Reference30 articles.

1. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

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4. Structural and electronic properties of wurtzite B x Al1-x N from first-principles calculations

5. Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

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