Raman scattering and stress measurements in Si1−xGexlayers epitaxially grown on Si(100) by ion‐beam sputter deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349104
Reference51 articles.
1. Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)
2. Variation in misfit dislocation behavior as a function of strain in the GeSi/Si system
3. Measurement of the band gap of GexSi1−x/Si strained‐layer heterostructures
4. Silicon-germanium alloys and heterostructures: Optical and electronic properties
5. Pseudomorphic growth of GexSi1−xon silicon by molecular beam epitaxy
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