A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4868579
Reference38 articles.
1. Some Critical Materials and Processing Issues in SiC Power Devices
2. A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges
3. Transition layers at the SiO2∕SiC interface
4. Relationship between 4H-SiC∕SiO2 transition layer thickness and mobility
5. Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors
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1. Adhesion and electronic properties of 4H-SiC/α-Al2O3 interfaces with different terminations calculated via first-principles methods;Surfaces and Interfaces;2023-10
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3. Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET;Electronics;2021-03-19
4. Reaction of NO molecule at 4H-SiC/SiO2 interface: an ab initio study for the effect of NO annealing after dry oxidation;Japanese Journal of Applied Physics;2021-02-12
5. Electrical characterization of SiC MOS capacitors: A critical review;Microelectronics Reliability;2020-09
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