Interstitial oxygen determination near epitaxial silicon and Czochralski silicon interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104637
Reference18 articles.
1. The Effects of Substrate Oxygen Content and Preannealing on the Properties of Silicon Epitaxial Layers
2. Layout and bias considerations for preventing transiently triggered latchup in CMOS
3. Electrical and Optical Properties of Heat-Treated Silicon
4. The Diffusivity and Solubility of Oxygen in Silicon
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-rate growth of epitaxial silicon at low temperatures (530–690 °C) by atmospheric pressure plasma chemical vapor deposition;Thin Solid Films;2003-11
2. Infrared determination of interstitial oxygen behavior during epitaxial silicon growth on Czochralski substrates;Journal of Applied Physics;1992-11
3. Optical Analysis of Oxygen in Epitaxial Silicon;Crucial Issues in Semiconductor Materials and Processing Technologies;1992
4. Infrared study of oxygen precipitates in Czochralski grown silicon;Journal of Applied Physics;1991-05-15
5. Impurities in Silicon Crystals and Silicon Epitaxial Films: Recent Advances;Physica Scripta;1991-01-01
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