Impurities in Silicon Crystals and Silicon Epitaxial Films: Recent Advances-Reference-Cited by-同舟云学术

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Impurities in Silicon Crystals and Silicon Epitaxial Films: Recent Advances

Published:1991-01-01 Issue: Volume:T39 Page:265-270
ISSN:0031-8949
Container-title:Physica Scripta
language:
Short-container-title:Phys. Scr.

Author:

Pivac B,Borghesi A,Geddo M,Stella A

Publisher

IOP Publishing

Subject

Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics

Link

http://stacks.iop.org/1402-4896/1991/i=T39/a=040/pdf

Reference30 articles.

1. Defect density reduction in epitaxial silicon

2. Autodoping Phenomena in Epitaxial Silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxygen precipitation in silicon;Journal of Applied Physics;1995-05

2. Optical Analysis of Oxygen in Epitaxial Silicon;Crucial Issues in Semiconductor Materials and Processing Technologies;1992

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