Optical Analysis of Oxygen in Epitaxial Silicon
Author:
Geddo M.,Pivac B.
Publisher
Springer Netherlands
Reference10 articles.
1. Geddo, M., Pivac, B., Borghesi, A., Stella, A. and Pedrotti, M. (1990)’ Optical determination of oxygen outdiffusion in epitaxial silicon grown on n-type Czochralski silicon’, Appl. Phys. Lett. 57, 1511–1513. 2. Geddo, M., Pivac, B., Borghesi, A., Stella, A. and Pedrotti, M. (1991)’ Interstitial oxygen determination near epitaxial silicon and Czochralski silicon interface’, Appl. Phys. Lett. 58, 370–372. 3. Geddo, M., Maghini, D. and Stella, A. (1986)’ Optical interference to determine the free carrier concentration in semiconducting epitaxial layer’, J. Electrochem. Soc. 133, 1414–1416. 4. Pajot, B., Stein, H., Cales, B. and Naud, C. (1985)’ Quantitative spectroscopy of interstitial oxygen in silicon’, J. Electrochem. Soc. 132, 3034–3037. 5. Shimura, F., Higuchi, T. and Hockett, R. (1988)’ Outdiffusion of oxygen and carbon in Czochralski silicon’, Appl. Phys. Lett. 53, 69–71.
|
|