Quantitative Spectroscopy of Interstitial Oxygen in Silicon-Reference-Cited by-同舟云学术

Quantitative Spectroscopy of Interstitial Oxygen in Silicon

Published:1985-12-01 Issue:12 Volume:132 Page:3034-3037
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Pajot B.¹²³⁴,Stein H. J.¹²³⁴,Cales B.¹²³⁴,Naud C.¹²³⁴

Affiliation:

1. Groupe de Physique des Solides de l'E.N.S., Tour 23, Université Paris 7, F‐75251 Paris Cedex 05, France

2. Sandia National Laboratories, Albuquerque, New Mexico 87185

3. CNRS, Centre de Recherche sur la Physique des Hautes Températures, F‐45045 Orléans Cedex, France

4. Optique de la Matière Condensée, Tour 13, Université Paris 6, F‐75230 Paris Cedex 05, France

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2113717/pdf

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