Infrared study of oxygen precipitates in Czochralski grown silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347622
Reference21 articles.
1. Effects of Thermal History on Microdefect Formation in Czochralski Silicon Crystals
2. Microdefects Formed in Carbon-Doped CZ Silicon Crystals by Oxygen Precipitation Heat Treatment
3. Oxygen in Silicon
4. Precipitation of oxygen in dislocation-free silicon
5. Precipitation of oxygen in silicon: Some phenomena and a nucleation model
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2. Development of nondestructive optical method and experimental setup for interstitial O:Si mapping with tens-of-microns locality;SPIE Proceedings;2005-01-20
3. Improvement of optical method of oxygen-in-silicon characterization and design consideration in measuring setup for detailed nondestructive mapping of interstitial oxygen;SPIE Proceedings;2003-09-30
4. Improved secondary ion mass spectroscopy detection limits of hydrogen, carbon, and oxygen in silicon by suppression of residual gas ions using energy and ejection angle filtering;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1997-09
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