Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers II: Experimental and computational aspects-Reference-Cited by-同舟云学术

Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers II: Experimental and computational aspects

Published:2003-05 Issue:9 Volume:93 Page:5244-5250
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Shaughnessy Derrick,Mandelis Andreas

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1565491

Reference9 articles.

1. Computational Aspects of Laser Radiometric Multiparameter Fit for Carrier Transport Property Measurements in Si Wafers

2. Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers I: Theoretical aspects

3. Minority carrier lifetime and iron concentration measurements on p-Si wafers by infrared photothermal radiometry and microwave photoconductance decay

4. Recombination mechanisms and doping density in silicon

5. Dynamics of dense laser-induced plasmas

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