On the infrared absorption coefficient measurement of thick heavily Zn doped GaAs using spectrally resolved modulated photothermal infrared radiometry
Author:
Affiliation:
1. Institute of Physics, Nicolaus Copernicus University, Grudziadzka 5, 87-100 Torun, Poland
2. Chair of Applied Solid-State Physics, Experimental Physics VI, Ruhr-University Bochum, Universitaetsstrasse 150, 44780 Bochum, Germany
Funder
DFH /UFA CDFA-05-06
National Science Center Poland
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4989448
Reference29 articles.
1. Infrared Absorption in Heavily Doped n-Type Si
2. E. L. Pankove ,Optical Processes in Semiconductors( Dover, New York, 1971), pp. 87–91.
3. E. E. Bell , “Optical constants and their measurement,” inHandbuch der Physik, edited by S. Flugge ( Springer-Verlag, Heidelberg, 1967), Vol.25, pp. 1–58.
4. Photoacoustic Fourier Transform Infrared Spectroscopy of Solid Samples
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