Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers I: Theoretical aspects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1565498
Reference7 articles.
1. Lifetime Study of Metastable Surface Recombination Centers in n‐Type Silicon Wafers
2. Computational Aspects of Laser Radiometric Multiparameter Fit for Carrier Transport Property Measurements in Si Wafers
3. Laser infrared photothermal radiometry of semiconductors: principles and applications to solid state electronics
4. Non-contacting determination of carrier lifetime and surface recombination velocity using photothermal radiometry
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