Coexistence of bunching and meandering instability in simulated growth of 4H-SiC(0001) surface
Author:
Affiliation:
1. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
2. Faculty of Mathematics and Natural Sciences, Card. Stefan Wyszynski University, ul Dewajtis 5, 01-815 Warsaw, Poland
Funder
European Regional Development Fund
Natonal Science Center of Poland
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4881816
Reference47 articles.
1. Stepped structure on the {0001} facet plane of α-SiC
2. Evolution of macrosteps on6H−SiC(0001): Impurity-induced morphological instability of step trains
3. Formation of periodic steps with a unit-cell height on 6H–SiC (0001) surface by HCl etching
4. Epitaxial growth of 4H–SiC on 4° off-axis (0001) and (0001¯) substrates by hot-wall chemical vapor deposition
5. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
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