Epitaxial growth of 4H–SiC on 4° off-axis (0001) and (0001¯) substrates by hot-wall chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Homoepitaxial growth of 4H-SiC on on-axis C-face substrates by chemical vapor depositon
3. Growth of step-free surfaces on device-size (0001)SiC mesas
4. Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part II: Evolution of surface steps
5. Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(0001̄) face
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1. Insights into the effect of susceptor rotational speed in CVD reactor on the quality of 4H-SiC epitaxial layer on homogeneous substrates;Materials Today Communications;2024-03
2. Kinetic Monte Carlo study on the effect of growth conditions on the epitaxial growth of 3C–SiC (0001) vicinal surface;Journal of Vacuum Science & Technology A;2024-01-30
3. High-Energy Dynamic Avalanche to Failure by Incremental Source-Voltage Increase in Symmetric Double-Trench & Asymmetric Trench SiC MOSFETs;IEEE Open Journal of Industry Applications;2024
4. Experimental determination of intrinsic carrier density in 4H-SiC based on electron diffusion current in an npn bipolar junction transistor;Journal of Applied Physics;2023-12-15
5. Insights on the Quality of 4h-Sic Layers Epitaxially Grown on Homogeneous Substrates by Changing the Rotational Speed of Susceptor in the Cvd Reactor;2023
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