Formation of periodic steps with a unit-cell height on 6H–SiC (0001) surface by HCl etching
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126663
Reference10 articles.
1. CI. Observations on carborundum of growth spirals originating from screw dislocations
2. In situ substrate preparation for high-quality SiC chemical vapour deposition
3. Preparation of atomically flat surfaces on silicon carbide using hydrogen etching
4. The role of excess silicon and in situ etching on 4H SiC and 6H SiC epitaxial layer morphology
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