Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition-Reference-Cited by-同舟云学术

Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

Published:2020-12-01 Issue:12 Volume:10 Page:125017
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Schilirò Emanuela¹^ORCID,Fiorenza Patrick¹^ORCID,Bongiorno Corrado¹,Spinella Corrado¹,Di Franco Salvatore¹,Greco Giuseppe¹^ORCID,Lo Nigro Raffaella¹,Roccaforte Fabrizio¹^ORCID

Affiliation:

1. Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi (CNR–IMM), Strada VIII, 5 Zona Industriale, 95121 Catania, Italy

Funder

Ministero dell’Istruzione, dell’Università e della Ricerca

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0023735

Reference36 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Recent advances on dielectrics technology for SiC and GaN power devices

3. State of the art on gate insulation and surface passivation for GaN-based power HEMTs

4. In situcontrol of oxygen vacancies in TiO2by atomic layer deposition for resistive switching devices

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