In situcontrol of oxygen vacancies in TiO2by atomic layer deposition for resistive switching devices-Reference-Cited by-同舟云学术

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In situcontrol of oxygen vacancies in TiO2by atomic layer deposition for resistive switching devices

Published:2013-06-25 Issue:29 Volume:24 Page:295202
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Park Sang-Joon,Lee Jeong-Pyo,Jang Jong Shik,Rhu Hyun,Yu Hyunung,You Byung Youn,Kim Chang Soo,Kim Kyung Joong,Cho Yong Jai,Baik Sunggi,Lee Woo

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/24/i=29/a=295202/pdf

Reference60 articles.

1. Resistive switching memory: observations with scanning probe microscopy

2. Resistive switching in transition metal oxides

3. Memory materials: a unifying description

4. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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