Growth of p-type and n-type m-plane GaN by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2338602
Reference21 articles.
1. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
2. Effects of macroscopic polarization in III-V nitride multiple quantum wells
3. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates
4. Growth of M-plane GaN(100) on γ-LiAlO
5. Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
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