Orientation-tunable InxGa1−xN nanowires with a high density of basal stacking faults for photoelectrochemical/photocatalytic applications-Reference-Cited by-同舟云学术

Orientation-tunable InxGa1−xN nanowires with a high density of basal stacking faults for photoelectrochemical/photocatalytic applications

Author:

Yuan Ronghuo¹²³⁴⁵,Luo Qingyuan⁶²⁷⁸⁹,Zhang Zenghui¹²³⁴⁵,Zheng Yufan¹²³⁴⁵,Feng Dengtang¹²³⁴⁵,Wang Defa⁶²⁷⁸⁹^ORCID,Hu Yan-Ling¹²³⁴⁵^ORCID

Affiliation:

1. Fujian Provincial Key Laboratory of Functional Materials and Applications

2. School of Materials Science and Engineering

3. Xiamen University of Technology

4. Xiamen

5. P.R. China

6. TJU-NIMS International Collaboration Laboratory

7. Tianjin University

8. Tianjin

9. China

Abstract

In_xGa_1−xN nanowires grew along the m-direction (A-NWs) or semipolar-direction (B-NWs) with the presence of a high density of BSFs.

Funder

National Natural Science Foundation of China

Xiamen University of Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

Reference59 articles.

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