Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells-Reference-Cited by-同舟云学术

Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells

Published:2012-04-16 Issue:16 Volume:100 Page:161101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hu Yan-Ling,Farrell Robert M.,Neufeld Carl J.,Iza Michael,Cruz Samantha C.,Pfaff Nathan,Simeonov Dobri,Keller Stacia,Nakamura Shuji,DenBaars Steven P.,Mishra Umesh K.,Speck James S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4704189

Reference19 articles.

1. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

2. Unusual properties of the fundamental band gap of InN

3. When group-III nitrides go infrared: New properties and perspectives

4. Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes

5. Demonstration of a III–Nitride/Silicon Tandem Solar Cell

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