Reactive ion etching of zinc doped InP using methane and hydrogen: Assessment of the degree and extent of changes in surface carrier concentration
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347017
Reference9 articles.
1. CW operation of 1.5 μm InGaAsP/InP BH lasers with a reactive-ion-etched facet
2. Reactive ion beam etching of InP with Cl2
3. Reactive ion etching of InP with Br2‐containing gases to produce smooth, vertical walls: Fabrication of etched‐faceted lasers
4. Low-loss single-mode InP/InGaAsP waveguides grown by MOVPE
5. Single-mode low-loss buried optical waveguide bends in GaInAsP/InP fabricated by dry etching
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A study of electrically active defects created in p-InP by CH4:H2 reactive ion etching;Journal of Applied Physics;1997-08-15
2. SEM evidence for near-surface carrier passivation by hydrogen in CH4/H2reactive ion etched p-InP;Semiconductor Science and Technology;1995-04-01
3. Smooth and Vertical InP Reactive Ion Beam Etching with Cl2ECR Plasma;Japanese Journal of Applied Physics;1992-05-15
4. Surface analysis of reactive ion‐etched InP;Journal of Applied Physics;1991-10
5. Magnetron ion etching of InP using mixture of methane and hydrogen and its comparison with reactive ion etching;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1991-07
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