Magnetron ion etching of InP using mixture of methane and hydrogen and its comparison with reactive ion etching-Reference-Cited by-同舟云学术

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Magnetron ion etching of InP using mixture of methane and hydrogen and its comparison with reactive ion etching

Published:1991-07 Issue:4 Volume:9 Page:1911
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Singh Jaspal

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inductively coupled plasma etching of InP using CH[sub 4]/H[sub 2] and CH[sub 4]/H[sub 2]/N[sub 2];Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002

2. Inductively coupled plasma etching of InP using N2/H2;Journal of Applied Physics;2001-05-15

3. Sidewall slope control of chemically assisted ion-beam etched structures in InP-based materials;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-07

4. InGaAsP/InP 1.55-?m lasers with chemically assisted ion beam-etched facets;Optical and Quantum Electronics;1996-05

5. Optimization of reactive ion etching of Al0.48In0.52As in CH4/H2 by the experimental design method;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-05

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