Reactive ion etching of InP with Br2‐containing gases to produce smooth, vertical walls: Fabrication of etched‐faceted lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101202
Reference10 articles.
1. GaInAsP/InP stripe‐geometry laser with a reactive‐ion‐etched facet
2. CW operation of 1.5 μm GaInAsP/InP buried-heterostructure laser with a reactive-ion-etched facet
3. Anisotropic reactive ion etching technique of GaAs and AlGaAs materials for integrated optical device fabrication
4. GaAs and AlGaAs anisotropic fine pattern etching using a new reactive ion beam etching system
5. CW operation of 1.5 μm InGaAsP/InP BH lasers with a reactive-ion-etched facet
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1. Nanoscale dry etching of germanium by using inductively coupled CF4 plasma;Electronic Materials Letters;2012-08
2. Photodissociation Dynamics of Phosphorus Trichloride (PCl3) at 235 nm Using Resonance Enhanced Multiphoton Ionization (REMPI) with Time-of-Flight (TOF) Mass Spectrometry;The Journal of Physical Chemistry A;2010-04-07
3. Anisotropic and Smooth Inductively Coupled Plasma Etching of III-V Laser Waveguides Using HBr-O[sub 2] Chemistry;Journal of The Electrochemical Society;2008
4. Processing of InP-Based Shallow Ridge Laser Waveguides Using a HBr ICP Plasma;2007 IEEE 19th International Conference on Indium Phosphide & Related Materials;2007-05
5. Etching Characteristics of HBr-Based Chemistry on InP Using the ICP Technique;Journal of The Electrochemical Society;2004-10-29
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