Anisotropic reactive ion etching technique of GaAs and AlGaAs materials for integrated optical device fabrication-Reference-Cited by-同舟云学术

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Anisotropic reactive ion etching technique of GaAs and AlGaAs materials for integrated optical device fabrication

Published:1985-05 Issue:3 Volume:3 Page:884
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Yamada Hirohito

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Optimization of GaAs ECR etching in chemically assisted ion beam process using Cl2/Ar plasma;Materials Science in Semiconductor Processing;2000-06

4. Influence of the gas mixture on the reactive ion etching of InP in CH[sub 4]-H[sub 2] plasmas;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-09

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