Influence of the gas mixture on the reactive ion etching of InP in CH[sub 4]-H[sub 2] plasmas
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Published:1997-09
Issue:5
Volume:15
Page:1733
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
24 articles.
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