Surface analysis of reactive ion‐etched InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349165
Reference15 articles.
1. III–V Technology: The Key for Advanced Devices
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4. Reactive ion etching damage to GaAs layers with etch stops
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1. Surface chemistry of InP ridge structures etched in Cl2-based plasma analyzed with angular XPS;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-09
2. X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl2-based inductively coupled plasma;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-01
3. Field emission property of highly ordered monodispersed carbon nanotube arrays;Applied Physics Letters;2001-05-14
4. Surface Damage Induced by Dry Etching;Handbook of Advanced Plasma Processing Techniques;2000
5. A study of electrically active defects created in p-InP by CH4:H2 reactive ion etching;Journal of Applied Physics;1997-08-15
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