Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1555687
Reference21 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
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1. Analysis of dielectric, impedance and electrical properties of interfacial layer: AlN;Journal of Materials Science: Materials in Electronics;2023-04
2. Temperature dependent electrical properties of AlN/Si heterojunction;Journal of Applied Physics;2018-11-28
3. Growth assessment and scrutinize dielectric reliability of c-axis oriented insulating AlN thin films in MIM structures for microelectronics applications;Materials Chemistry and Physics;2018-11
4. Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride;ECS Journal of Solid State Science and Technology;2017
5. Band alignment at AlN/Si (111) and (001) interfaces;Journal of Applied Physics;2015-07-28
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