Band alignment at AlN/Si (111) and (001) interfaces
Author:
Affiliation:
1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
2. Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, USA
Funder
Office of Naval Research (ONR)
U.S. Department of Education (DoED)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4927515
Reference44 articles.
1. III–nitrides: Growth, characterization, and properties
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5. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films
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