Hydrogen structures and the optoelectronic properties in transition films from amorphous to microcrystalline silicon prepared by hot-wire chemical vapor deposition-Reference-Cited by-同舟云学术

Hydrogen structures and the optoelectronic properties in transition films from amorphous to microcrystalline silicon prepared by hot-wire chemical vapor deposition

Published:2003-04 Issue:7 Volume:93 Page:3776-3783
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Han Daxing,Wang Keda,Owens Jessica M.,Gedvilas Lynn,Nelson Brent,Habuchi Hitoe,Tanaka Masako

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1555680

Reference23 articles.

1. Structural, defect, and device behavior of hydrogenated amorphous Si near and above the onset of microcrystallinity

2. High‐resolution transmission electron microscopy study of solid phase crystallized silicon thin films on SiO2: Crystal growth and defects formation

3. Amorphous Silicon and Silicon Germanium Alloy Solar Cells Deposited by VHF at High Rates

4. Assessment of the Use of Microcrystalline Silicon Materials Grown at Rates Near 15 Å/s as i-layer Material for Single and Multi-Junction Solar Cells

5. Deposition of device quality, lowHcontent amorphous silicon

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