Transition between two states of surface coverage and etch rate during Si etching in inductively coupled Cl2–Ar plasmas with changing mixtures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1585124
Reference21 articles.
1. Kinetic study of low energy ion-enhanced polysilicon etching using Cl, Cl2, and Cl+ beam scattering
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3. Hydrogen-induced instability on the flat Si(001) surface via steric repulsion
4. Interplay of the monohydride phase and a newly discovered dihydride phase in chemisorption of H on Si(100)2 × 1
5. Patterning of Si(001) with halogens: Surface structure as a function of the halogen chemical potential
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